hfm101m thru hfm107m page: 1 frontier electronics corp. 667 e. cochran street, simi valley, ca 93065 tel: (805) 522-9998 fax: (805) 522-9989 e-mail: frontiersales@frontierusa.com web: http://www.frontierusa.com 1a surface mount ultra fast recovery rectifiers hfm101m thru hfm107m features z for surface mounted applications z low profile package z built-in strain relief z easy pick and place z plastic material used carries underwriters laboratory classification 94 v-0 z ultra fast switching z glass passivated chip junction z high temperature soldering: 250c/10 seconds at terminals mechanical data z case: molded plastic, sod-123, dimensions in inches and (millimeters) z terminals: solder plated z polarity: indicated by cathode band z weight: 0.04 grams maximum ratings and electrical characteristics ratings at 25 c ambient temperature unless otherwise specified single phase, half wave, 60 hz, resistive or i nductive load. for capacitive load, derate current by 20% ratings symbol hfm101m HFM102M hfm103m hfm104m hfm105m hfm106m hfm107m units maximum recurrent peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current at tl=90 c i o 1.0 a maximum overload surge 8.3ms single half sine-wave i fsm 30 a typical junction capacitance (note 1) c j 20 15 pf typical thermal resistance (note 2) jl 30 c/w storage temperature range t stg -55 to + 150 operating temperature range t op -55 to + 125 electrical characteristics (a t t a =25 c unless otherwise noted) characteristics symbol hfm101m HFM102M hfm103m hfm104m hfm105m hfm106m hfm107m units maximum forward voltage at 1a and 25 v f 1.0 1.3 1.7 v maximum reverse current at 25 i r 10 a maximum reverse recovery time (note 3) t rr 50 75 ns marking h1 h2 h3 h4 h5 h6 h7 note: 1. measured at 1.0 mhz and applied reverse voltage of 4.0 v 2. thermal resistance from junction to terminal 5.0mm 2 (.013 mm thick) land areas 3. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25 a .035(0.9) typ. .071(1.8 ) .055(1.4 ) .161(4.1) .146(3.7) .063(1.6) .055(1.4) .0012(0.3) typ. .035(0.9) typ. .126(3.2) .110(2.8)
hfm101m thru hfm107m page: 2 ratings and characteristic curve hfm101m thru hfm107m fig. 3-typical reverse characteristics 20 40 60 80 100 120 140 percent of rated peak reverse voltage (%) 1000 100 10 1 0.1 t j =25 o c t j =80 o c t j =100 o c instantaneous reverse current (ua) +0.5a 0 -0.25a -1.0a trr 1cm set time base for 10/20 ns/cm average forward current (a) 2.0 1.0 0 25 50 75 100 125 150 175 lead temperature ( o c) fig. 2-typical forward current derating curve single phase half wave60 hz resistive or inductive load p.c.b mounted on 0.30.3?(8.08.0mm) copper pad fig. 5-maximum non-repetitive forward surge current 60 50 40 30 20 10 0 0 1 2 4 6 10 20 40 60 100 number of cycles at 60 hz peak forward surge current (a) 8.3 ms single half sine wave (jedec method) fig. 1-test circuit diagram and reverse recovery time characteristic pulse generator ( note 2 ) (+) 25 v dc (approx) (-) d.u.t. 1 non inductive oscilloscope ( note 1 ) 50 no inductive 10 no inductive (-) (+) note: 1. rise time=7ns max. input impedance=1 mohms 22pf 2. rise time =10ns max. source impedance=50 ohms fig. 6-typical junction capacitance . 1 .2 .4 1.0 2 4 10 20 40 100 reverse voltage ( v ) 200 100 40 20 10 6 4 2 1 fig. 4-typical instantaneous forward characteristics .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 instantaneous forward voltage (v) 100 10 1 .1 .01 instantaneous forward current (a) hfm101m~103m hfm104m hfm105m~107m junction capacitance (pf) t j =25 o c hfm101m~103m hfm105m~107m
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